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The existence of a double S-shaped process curve during reactive magnetron sputtering

机译:反应磁控溅射过程中双S形工艺曲线的存在

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摘要

The four dimensional parameter space (discharge voltage and current and reactive gas flow and pressure) related to a reactive Ar/O_2 DC magnetron discharge with an aluminum target and constant pumping speed was acquired by measuring current-voltage characteristics at different oxygen flows. The projection onto the pressure-flow plane allows us to study the well-known S-shaped process curve. This experimental procedure guarantees no time dependent effects on the result. The obtained process curve appears not to be unique but rather two significantly different S-shaped curves are noticed which depend on the history of the steady state target condition. As such, this result has not only an important impact on the fundamental description of the reactive sputtering process but it can also have its consequences on typical feedback control systems for the operation in the transition regime of the hysteresis during reactive magnetron sputtering.
机译:通过在不同氧气流量下测量电流-电压特性,获得了与具有铝靶材且恒定泵速的反应性Ar / O_2 DC磁控管放电有关的四维参数空间(放电电压,电流,反应性气体流量和压力)。在压力流平面上的投影使我们能够研究众所周知的S形过程曲线。该实验过程保证了对结果没有时间依赖性的影响。所获得的过程曲线似乎不是唯一的,而是注意到了两个明显不同的S形曲线,这取决于稳态目标条件的历史。这样,该结果不仅对反应性溅射工艺的基本描述具有重要影响,而且还对典型的反馈控制系统产生影响,该典型的反馈控制系统用于在反应性磁控溅射过程中在磁滞过渡状态下操作。

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  • 来源
    《Applied Physics Letters》 |2016年第11期|111605.1-111605.4|共4页
  • 作者单位

    Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Gent, Belgium;

    Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Gent, Belgium;

    Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Gent, Belgium;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:14:49

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