机译:用于交叉点非易失性存储应用的Te-SbO选择器器件的阈值切换机制分析
Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, South Korea;
Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, South Korea;
SK Hynix, 2091 Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do 17336, South Korea;
Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, South Korea;
Department of Materials Science and Engineering and Optoelectronics Convergence Research Center, Chonnam National University, 77 Yongbong-ro, Buk-gu, Gwangju 61186, South Korea;
Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, South Korea;
机译:Te-SbO薄膜的阈值转换,用于交叉电阻存储应用的选择设备
机译:阈值切换选择器:基于高度有序Ag纳米点的阈值切换选择器,用于X点存储应用(Adv。Sci。10/2019)
机译:交叉点内存应用中单元中阈值切换和内存切换的共现
机译:Cr掺杂的V
机译:选择器应用的热感应门限开关装置的研究
机译:阈值切换选择器:基于高度有序Ag纳米点的阈值切换选择器用于X点存储应用(Adv。Sci。10/2019)
机译:氧化氧化物RRAM装置电阻切换和传导机制的研究,用于新兴的非易失性存储器应用
机译:雪崩击穿机制及其在开关器件中的应用