Large flexoelectricity in AI_2O_3-doped Ba(Ti_(0.85)Sn_(0.15))O_3 ceramics

摘要

We reported an enhanced flexoelectricity in Al_2O_3-doped Ba(Ti)(0.85)Sn_(0.15))O_3 (BTS) ceramics. The transverse flexoelectric coefficient of the 0.5 wt. % Al_2O_3-doped BTS ceramic was measured to be 40.5 µC/m at 23 ℃, which is almost 2 times larger than that of pure BTS. Above Curie temperature, the temperature dependence of the flexoelectric coefficients in the 0.5 wt. % A1_2O_3-doped ceramic was found much more sensitive compared with that of the pure BTS ceramic. It is concluded that the enhanced flexoelectricity is possibly related to inner microstrains or the noncrystalline polar phases.