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Nanosecond magnetization dynamics during spin Hall switching of in-plane magnetic tunnel junctions

机译:平面内磁性隧道结的自旋霍尔开关过程中的纳秒磁化动力学

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摘要

We present a study of the magnetic dynamics associated with nanosecond scale magnetic switching driven by the spin Hall effect in 3-terminal nanoscale magnetic tunnel junctions (MTJs) with in-plane magnetization. Utilizing fast pulse measurements in a variety of material stacks and detailed micromagnetic simulations, we demonstrate that this unexpectedly fast and reliable magnetic reversal is facilitated by the self-generated Oersted field, and that the short-pulse energy efficiency can be substantially enhanced by spatial non-uniformity in the initial magnetization of the magnetic free layer. The sign of the Oersted field is essential for this enhancement-in simulations in which we artificially impose a field-like torque with a sign opposite to the effect of the Oersted field, the result is a much slower and stochastic switching process that is reminiscent of the so-called incubation delay in conventional 2-terminal spin-torque-switched MTJs.
机译:我们目前对与平面内磁化作用的3端纳米级磁性隧道结(MTJs)中的自旋霍尔效应驱动的纳秒级磁性开关相关的磁动力学的研究。利用各种材料堆中的快速脉冲测量结果以及详细的微磁模拟,我们证明了自产生的Oersted磁场促进了这种出乎意料的快速而可靠的磁反转,而空间无源可大大提高短脉冲能量效率-磁性自由层的初始磁化的均匀性。 Oersted场的符号对于此增强仿真至关重要,在该模拟中,我们人为地施加了类似于Oersted场的符号的类似磁场的转矩,其结果是切换过程更加缓慢和随机,令人联想到传统的2端自旋转矩开关MTJ中的所谓潜伏期。

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  • 来源
    《Applied Physics Letters》 |2017年第12期|122402.1-122402.5|共5页
  • 作者单位

    Cornell University, Ithaca, New York 14853, USA;

    Cornell University, Ithaca, New York 14853, USA;

    Cornell University, Ithaca, New York 14853, USA;

    Cornell University, Ithaca, New York 14853, USA;

    Cornell University, Ithaca, New York 14853, USA;

    Cornell University, Ithaca, New York 14853, USA ,Kavli Institute at Cornell, Ithaca, New York 14853, USA;

    Cornell University, Ithaca, New York 14853, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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  • 入库时间 2022-08-18 03:14:00

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