Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure 'workshop'

摘要

The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures by metalorganic vapour phase epitaxy, from dome and ring-like structures to double dot in a ring ensembles. Moreover, preliminary microphotolumi-nescence data are indicating the capped rings system as an interesting candidate for single quantum emitters at telecom wavelengths, potentially becoming a possible alternative to InAs QDs for quantum technology and telecom applications.