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Solution-processed p-type copper(l) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

机译:溶液处理的p型硫氰酸铜(l)(CuSCN),用于低压柔性薄膜晶体管和集成逆变器电路

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摘要

We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm~2 V~(-1) s~(-1) and 0.013 cm~2 V~(-1) s~(-1), respectively, current on/off ratio in the range 10~2-10~4, and maximum operating voltages between —3.5 and —10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as -3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.
机译:我们报告了低工作电压薄膜晶体管(TFT)和基于硫氰酸铜(I)层的集成逆变器,该层是在自立式塑料箔上在低温下从溶液中加工而成的。制成的共面底栅TFT和交错顶栅TFT具有空穴传输特性,平均迁移率分别为0.0016 cm〜2 V〜(-1)s〜(-1)和0.013 cm〜2 V〜(-1) s〜(-1)分别取决​​于所使用的栅极电介质,电流开/关比在10〜2-10〜4范围内,最大工作电压在-3.5和-10 V之间。令人鼓舞的TFT特性使得能够在低至-3.5 V的电压下在具有3.4的电压增益的柔性自支撑塑料衬底上制造单极非门。半径为4毫米,证明了柔性电子技术的潜力。

著录项

  • 来源
    《Applied Physics Letters》 |2017年第11期|113504.1-113504.5|共5页
  • 作者单位

    Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom,Electronics Laboratory, Swiss Federal Institute of Technology Zurich, Gloriastrasse 35, 8092 Zurich, Switzerland;

    Department of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology (VISTEC), Rayong 21210, Thailand;

    Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom;

    Electronics Laboratory, Swiss Federal Institute of Technology Zurich, Gloriastrasse 35, 8092 Zurich, Switzerland,Sensor Technology Research Center, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9RH, United Kingdom;

    Electronics Laboratory, Swiss Federal Institute of Technology Zurich, Gloriastrasse 35, 8092 Zurich, Switzerland;

    Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom;

    Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hong Kong, China;

    Electronics Laboratory, Swiss Federal Institute of Technology Zurich, Gloriastrasse 35, 8092 Zurich, Switzerland;

    Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom,Materials Science and Engineering, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:14:00

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