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Exceptional transport property in a rolled-up germanium tube

机译:卷式锗管具有出色的运输性能

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摘要

Tubular germanium (Ge) resistors are demonstrated by rolling-up thin Ge nanomembranes (NMs, 50 nm in thickness) with electrical contacts. The strain distribution of rolled-up Ge microtubes along the radial direction is investigated and predicted by utilizing micro-Raman scattering spectroscopy with two different excitation lasers. Electrical properties are characterized for both unreleased GeNMs and released/rolled-up Ge microtubes. The conductivities of GeNMs significantly decrease after rolling-up into tubular structures, which can be attributed to surface charging states on the conductance, band bending, and piezo-resistance effect. When illuminated with a light source, facilitated by the suppressed dark current of rolled-up Ge tubes, the corresponding signal-to-noise ratio can be dramatically enhanced compared with that of planar GeNMs.
机译:管状锗(Ge)电阻器是通过卷起带有电触点的薄Ge纳米膜(厚度为50 nm的NM)来证明的。利用带两个不同激发激光的微拉曼散射光谱技术研究并预测了卷起的Ge微管沿径向的应变分布。未释放的GeNM和释放/卷起的Ge微管的电学特性均已表征。在卷成管状结构后,GeNMs的电导率显着降低,这可以归因于电导,带弯曲和压阻效应的表面电荷状态。当用光源照射时,由于卷曲的Ge管的暗电流得到抑制,因此与平面GeNM相比,可以显着提高相应的信噪比。

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  • 来源
    《Applied Physics Letters》 |2017年第11期|112104.1-112104.5|共5页
  • 作者单位

    Department of Materials Science, Fudan University, Shanghai 200433, People's Republic of China,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China;

    Department of Microelectronic Science and Engineering, Faculty of Science, Ningbo University, Ningbo 315211, Zhejiang, People's Republic of China;

    Department of Microelectronic Science and Engineering, Faculty of Science, Ningbo University, Ningbo 315211, Zhejiang, People's Republic of China;

    Department of Materials Science, Fudan University, Shanghai 200433, People's Republic of China;

    Department of Materials Science, Fudan University, Shanghai 200433, People's Republic of China,State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, Zhejiang, People's Republic of China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China;

    Department of Materials Science, Fudan University, Shanghai 200433, People's Republic of China;

    Department of Materials Science, Fudan University, Shanghai 200433, People's Republic of China,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:13:59

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