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Nature of electron trap states under inversion at ln_(0.53)Ga_(0.47)As/AI_2O_3 interfaces

机译:处于ln_(0.53)Ga_(0.47)As / AI_2O_3界面时电子陷阱态的性质

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摘要

In and Ga impurities substitutional to A1 in the oxide layer resulting from diffusion out of the substrate are identified as candidates for electron traps under inversion at In_(0.53)Ga_(0.47)As/Al_2O_3 interfaces. Through density-functional calculations, these defects are found to be thermodynami-cally stable in amorphous Al_2O_3 and to be able to capture two electrons in a dangling bond upon breaking bonds with neighboring O atoms. Through a band alignment based on hybrid functional calculations, it is inferred that the corresponding defect levels lie at ~ 1 eV above the conduction band minimum of In_(0.53)Ga_(0.47)As, in agreement with measured defect densities. These results support the technological importance of avoiding cation diffusion into the oxide layer.
机译:识别出由于从衬底中扩散出来而在氧化物层中置换为Al的In和Ga杂质,将其作为In_(0.53)Ga_(0.47)As / Al_2O_3界面下的电子陷阱的候选者。通过密度泛函计算,发现这些缺陷在非晶态Al_2O_3中是热力学稳定的,并且在与相邻O原子断开键合时能够捕获悬空键中的两个电子。通过基于混合函数计算的能带对齐,可以推断出相应的缺陷水平在In_(0.53)Ga_(0.47)As导带最小值的上方约1 eV,与测量的缺陷密度相符。这些结果支持了避免阳离子扩散到氧化物层中的技术重要性。

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  • 来源
    《Applied Physics Letters》 |2017年第11期|111602.1-111602.4|共4页
  • 作者单位

    Chaire de Simulation à I'Echelle Atomique (CSEA), Ecole Polytechnique Fédérate de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;

    IMEC, Kapeldreef75, B-3001 Leuven, Belgium;

    Chaire de Simulation à I'Echelle Atomique (CSEA), Ecole Polytechnique Fédérate de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:13:59

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