机译:La掺杂Hf_(0.5)Zr_(0.5)O_2薄膜用于高效静电超级电容器
Moscow Inst Phys & Technol, Inst Skii Per 9, Dolgoprudnyi 141701, Moscow Region, Russia;
Moscow Inst Phys & Technol, Inst Skii Per 9, Dolgoprudnyi 141701, Moscow Region, Russia;
Moscow Inst Phys & Technol, Inst Skii Per 9, Dolgoprudnyi 141701, Moscow Region, Russia;
Pusan Natl Univ, Coll Engn, Sch Mat Sci & Engn, 2,Busandaehak Ro 63Beon Gil, Busan 46241, South Korea;
Moscow Inst Phys & Technol, Inst Skii Per 9, Dolgoprudnyi 141701, Moscow Region, Russia;
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea;
机译:优异的铁电HF_(0.5)ZR_(0.5)O_2薄膜,用超薄AL_2O_3用作封盖层
机译:Hf_(0.5)Zr_(0.5)O_2薄膜在较宽的工作温度范围内稳定的铁电性能
机译:溅射HF_(0.5)Zr_(0.5)Zr_(0.5)O_2薄膜的铁电切换动力学的比较研究,具有薄膜厚度和结晶度的变化
机译:铁电HF_(0.5)Zr_(0.5)O_2薄膜中漏电流机制
机译:通过反应磁控溅射沉积的亚稳态钛(0.5)铝(0.5)铝合金薄膜的物理性能。
机译:四(乙基甲基氨基)和四(二甲基氨基)前体在原子层沉积Hf0.5Zr0.5O2薄膜中铁电性能的比较研究
机译:外延铁电La-掺杂HF0.5ZR0.5O2薄膜