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Ferroelectric polarization control of spin states in Mn_4N/PMN-PT heterostructures revealed by topological Hall effect

机译:拓扑霍尔效应揭示Mn_4N / PMN-PT异质结构中自旋态的铁电极化控制

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摘要

Topological Hall effect (THE) as one of spin-related effects originates from scalar spin chirality formed by non-coplanar spin structures, being a promising tool for probing the change of electron spin. Single-phase (022) Mn4N films with coplanar spin structures were prepared on unpoled ferroelectric [Pb(Mg1/3Nb2/3)O-3]0.67-[PbTiO3](0.33) (PMN-PT) substrates. The transport properties of Mn4N/PMN-PT have been investigated. The decreased magnetization and anomalous resistivity imply that the spin states of Mn4N are influenced by ferroelectric polarization of the substrate. The observation of THE in the Mn4N/PMN-PT heterostructure strongly supports that the spin states of Mn4N are modified. After poling PMN-PT, the enhanced THE peak magnitude verifies that the spin states of Mn4N are tuned by ferroelectric polarization. This study provides a non-magnetic method for manipulation of spin states, which could avoid the external magnetic field perturbations. Published by AIP Publishing.
机译:作为自旋相关效应之一的拓扑霍尔效应(THE)起源于由非共面自旋结构形成的标量自旋手性,是探测电子自旋变化的有前途的工具。在无极铁电[Pb(Mg1 / 3Nb2 / 3)O-3] 0.67- [PbTiO3](0.33)(PMN-PT)衬底上制备具有共面自旋结构的单相(022)Mn4N薄膜。研究了Mn4N / PMN-PT的传输性质。降低的磁化强度和反常电阻率意味着Mn4N的自旋态受基底铁电极化的影响。 Mn4N / PMN-PT异质结构中THE的观察结果强烈支持Mn4N的自旋态被修饰。极化PMN-PT后,增强的THE峰幅度验证了Mn4N的自旋态已被铁电极化所调谐。这项研究提供了一种用于控制自旋状态的非磁性方法,该方法可以避免外部磁场的干扰。由AIP Publishing发布。

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  • 来源
    《Applied Physics Letters》 |2018年第12期|122403.1-122403.4|共4页
  • 作者单位

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 入库时间 2022-08-18 03:13:56

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