机译:使用偏振掺杂的P型AlGaN包层的基于AlgaN的紫外-B波段激光二极管的内部损失
Meijo Univ Dept Mat Sci & Engn Nagoya Aichi 4688502 Japan;
Meijo Univ Dept Mat Sci & Engn Nagoya Aichi 4688502 Japan;
Meijo Univ Dept Mat Sci & Engn Nagoya Aichi 4688502 Japan;
Meijo Univ Dept Mat Sci & Engn Nagoya Aichi 4688502 Japan;
Meijo Univ Dept Mat Sci & Engn Nagoya Aichi 4688502 Japan|Asahi Kasei Corp Innovat Devices R&D Ctr Fuji Shizuoka 4168501 Japan;
Meijo Univ Dept Mat Sci & Engn Nagoya Aichi 4688502 Japan;
Meijo Univ Dept Mat Sci & Engn Nagoya Aichi 4688502 Japan;
Meijo Univ Dept Mat Sci & Engn Nagoya Aichi 4688502 Japan;
Meijo Univ Dept Mat Sci & Engn Nagoya Aichi 4688502 Japan|Mie Univ Grad Sch Reg Innovat Studies Tsu Mie 5148507 Japan;
Mie Univ Grad Sch Reg Innovat Studies Tsu Mie 5148507 Japan;
Meijo Univ Dept Mat Sci & Engn Nagoya Aichi 4688502 Japan;
Meijo Univ Dept Mat Sci & Engn Nagoya Aichi 4688502 Japan;
Meijo Univ Dept Mat Sci & Engn Nagoya Aichi 4688502 Japan;
Meijo Univ Dept Mat Sci & Engn Nagoya Aichi 4688502 Japan|Nagoya Univ Akasaki Res Ctr Nagoya Aichi 4648603 Japan;
laser diode; AlGaN; internal loss; polarization doping;
机译:无杂质掺杂的基于Algan的P型分布式偏振掺杂掺杂的空间充电轮廓研究,用于UV-C激光二极管
机译:脱位密度对基于AlGaN基紫外-b波段激光光学增益和内部损失的影响
机译:紫外-B激光二极管结构中的引导层自发亚斑喷发射分析含有组合物分级的P-AlGaN包层覆层
机译:镁浓度和准分子激光退火(ELA)对基于AlGaN的UVB激光二极管应用的p-AlGaN包覆层的影响
机译:电注入的基于Algan的UVC激光器的工程
机译:具有高镁掺杂效率的特别设计的超晶格p型电子阻挡层的几乎无效率下降的基于AlGaN的紫外线发光二极管
机译:AlGaN基深紫外发光二极管的能带工程和极化诱导掺杂的研究