Photonics integrated circuits using Al_xGa_(1-x)N based UVC light-emitting diodes, photodetectors and waveguides

摘要

We report on a study of UVC photonics integrated circuit consisting of monolithically integrated AlxGa1-xN multiple quantum wells based light-emitting diodes, detectors and channel waveguides on sapphire substrates. The waveguide stack consisted of a 1.5 mu m thick n-Al0.65Ga0.35N waveguide over an AlN (3.5 mu m thick) clad layer. Using the integrated devices, we estimated the multi-mode ridge waveguide losses to be 23 cm(-1) at lambda(emission) similar to 280 nm. We also measured that approximately 80% of the guided light was confined in the n(+)-Al0.65Ga0.35N layer, 7% in the underlying AlN cladding and the remaining 13% in the double-side polished sapphire substrate.