A novel steep slope hybrid InGaZnO TFT with negative DIBL improvement based on the Ag/HfO_2 threshold switching device

摘要

We present a steep slope hybrid thin film transistor (TFT) that integrates an Ag/HfO2 based threshold switching (TS) with a ferroelectric HfZrO gated InGaZnO TFT. The hybrid TFT shows a minimum subthreshold swing of 16 mV decade. The negative differential resistance effect (NDR) was observed during the switching process of the TS. And the InGaZnO TFT shows a negative drain-induced barrier lowering (DIBL) effect. Furthermore, a Verilog-A model is developed to simulate the hybrid TFT. All of these suggests the as-fabricated hybrid TFT is suitable for low power TFT based applications. (C) 2019 The Japan Society of Applied Physics