Single transverse mode operation of GaN-based vertical-cavity surface-emitting laser with monolithically incorporated curved mirror

摘要

We report single transverse mode operation of a blue GaN-based vertical-cavity surface-emitting laser (GaN-VCSEL) with a monolithically incorporated curved mirror. For a device with a 4 mu m current aperture diameter and a curved mirror with a radius of curvature (ROC) of 51 mu m, single transverse mode operation was confirmed up to an output power of 3.2 mW under continuous wave operation at 20 degrees C. For a device with a smaller ROC of 31 mu m, multi transverse mode operation was confirmed, indicating that the transverse mode can be controlled by the cavity design of such GaN-VCSELs. (C) 2019 The Japan Society of Applied Physics