Very low amplified spontaneous emission thresholds of bis-styrylbenzene derivatives with trifluoromethyl and trifluoromethoxy groups in terminal positions

摘要

In considering the future development of organic current injection laser devices, it is indispensable to develop an n-type semiconductor material exhibiting excellent luminescence ability. Therefore, the author focused on bis-styrylbenzene which is an optoelectronically superior skeleton and trifluoromethyl groups which are electron-withdrawing groups: the research subjects in this report were E,E-1,4-bis(4-trifluorometylstyryl)benzene (4CF3) and E,E-1,4-bis(4- trifluoromethoxystyryl)benzene (4OCF3). 4CF3 and 4OCF3 had very good crystallinity, and could easily form relatively large crystals simply by dropping the solution on to the polydimethylsiloxane plate. The crystals of 4CF3 and 4OCF3 showed excellent emission abilities. The crystals of 4CF3 and 4OCF3 showed very low amplified spontaneous emission (ASE) thresholds of, respectively, 1.6 and 3.0 mu Jcm(-2) under nitrogen laser excitation. (C) 2019 The Japan Society of Applied Physics