High sensitivity of room-temperature sub-terahertz photodetector based on In_(0.53)Ga_(0.47)As material

摘要

A sub-terahertz photodetector based on the narrow-gap semiconductor In0.53Ga0.47As is designed, fabricated, and characterized. The detector exhibits a responsivity up to 515 V/W, a noise equivalent power lower than 20 pW/Hz(0.5), a detectivity up to 7.2 x 10(8) cm.Hz(0.5)/W, and a response time of 4.1 mu s in the sub-terahertz waveband for room-temperature operation. The achieved excellent performance, together with a relatively large detector feature size, simple structure, and easy manufacturing, provide a promising approach to the development of sensitive terahertz room-temperature detectors. (C) 2018 The Japan Society of Applied Physics