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Highly Conductive and Transparent Poly(3,4-ethylenedioxythiophene):p-Toluene Sulfonate Films as a Flexible Organic Electrode

机译:高导电性和透明性的聚(3,4-乙撑二氧噻吩):对甲苯磺酸膜作为柔性有机电极

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摘要

Highly transparent and conductive poly(3,4-ethylenedioxythiophene):p-toluene sulfonate (PEDOT:PTS) films were prepared by gas-phase polymerization using the chemical vapor deposition (CVD) technique for flexible organic electrodes. These conductive PEDOT:PTS films have a high transparency (up to 80%), and possess a very low sheet resistance of a 100Ω/□ (up to 2500Scm~(-1)) at 150nm thickness Their sheet resistance attained 27 Ω/□ at 350 nm thickness with O_2 plasma doping. The 1-3 mm pitched pattern can also be easily formed by plasma etching and/or the selective exposure technique of O_2 plasma. This electrode film has a higher transmittance than an amorphous indium-tin oxide (a-ITO) electrode film with thickness under 120 nm, and their conductivities were comparable with the a-ITO layer. We report on the fabrication and characterization of a flexible organic light-emitting diode (OELD) using PEDOT:PTS for the electrodes. The device is demonstrated to exhibit light emission and a brightness level up to 1800cd/m~2 at 25 V.
机译:使用化学气相沉积(CVD)技术通过气相聚合反应制备柔性有机电极的高透明导电聚(3,4-乙撑二氧噻吩):对甲苯磺酸(PEDOT:PTS)膜。这些导电的PEDOT:PTS薄膜具有很高的透明度(高达80%),并且在150nm的厚度下具有100Ω/□的极低薄层电阻(高达2500Scm〜(-1))。它们的薄层电阻达到27Ω/□ O 2等离子体掺杂在350 nm厚度下进行。 1-3mm的倾斜图案也可以通过等离子体蚀刻和/或O_2等离子体的选择性曝光技术容易地形成。该电极膜的透射率比厚度小于120nm的非晶铟锡氧化物(a-ITO)电极膜高,并且其电导率与a-ITO层相当。我们报道了使用PEDOT:PTS作为电极的柔性有机发光二极管(OELD)的制造和表征。该器件在25 V电压下的发光能力高达1800cd / m〜2。

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  • 来源
    《Applied physics express》 |2009年第10期|091501.1-091501.6|共6页
  • 作者单位

    School of Advanced Materials Engineering, Kookmin University, Sungbuk-gu, Seoul 136-702, Korea;

    School of Advanced Materials Engineering, Kookmin University, Sungbuk-gu, Seoul 136-702, Korea;

    School of Advanced Materials Engineering, Kookmin University, Sungbuk-gu, Seoul 136-702, Korea;

    School of Advanced Materials Engineering, Kookmin University, Sungbuk-gu, Seoul 136-702, Korea;

    School of Advanced Materials Engineering, Kookmin University, Sungbuk-gu, Seoul 136-702, Korea;

    Department of Advanced Materials Science and Engineering, Daejin University, Pocheon, Kyonggi-do 487-711, Korea;

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