Hetero-Epitaxial Growth of ZnO Film by Temperature-Modulated Metalorganic Chemical Vapor Deposition

摘要

ZnO films were fabricated by metalorganic chemical vapor deposition while a laser substrate heating system was used to rapidly cycle the sample temperature. When a hydrogen gas atmosphere was used together with the temperature modulation, ZnO films deposited from diethyl-zinc and oxygen exhibited oxygen-face polarity and a smooth surface. The quality of ZnO films was good enough to observe phonon replicas corresponding to the transition from donor-bound to free exciton in the temperature dependence of photoluminescence. The growth of ZnO film is discussed in relation to the combined effect of growth temperature modulation and the hydrogen atmosphere.