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SiO_2 Electret Generated by Potassium Ions on a Comb-Drive Actuator

机译:梳状驱动器上钾离子产生的SiO_2驻极体

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Silicon dioxide electret generated by doping potassium ions will be demonstrated by forming it on a comb-drive actuator. The comb-drive actuator made of silicon on an insulator substrate is oxidized with bubbling a stream of KOH solution to form silicon oxide film including potassium ions uniformly on the etched side walls of comb electrodes. After a bias-temperature procedure at about 900-1000 K and 100 V was applied to the device, we confirmed a 40 V built-in potential difference between the opposing comb electrodes. The gradual decay of the potential was observed, but 35 V was maintained even after 1 month.
机译:掺杂钾离子产生的二氧化硅驻极体将通过在梳齿驱动致动器上形成来证明。在鼓泡的KOH溶液中鼓泡氧化由绝缘体基板上的硅制成的梳状驱动致动器,以在梳状电极的蚀刻侧壁上均匀地形成包含钾离子的氧化硅膜。在向器件施加约900-1000 K的偏压温度程序和100 V电压后,我们确认了相对的梳状电极之间存在40 V的内置电势差。观察到电势逐渐衰减,但即使在1个月后仍保持35V。

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  • 来源
    《Annales de l'I.H.P》 |2011年第11期|p.114103.1-114103.3|共3页
  • 作者单位

    Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan;

    Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan;

    Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan;

    AOI Electronics Co., Ltd., Takamatsu 761-8014, Japan;

    AOI Electronics Co., Ltd., Takamatsu 761-8014, Japan;

    Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan;

    Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan;

    Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan;

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