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High Output Power (~400μW) Oscillators at around 550 GHz Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers

机译:使用具有渐变发射极和薄壁垒的谐振隧穿二极管,在550 GHz左右的高输出功率(〜400μW)振荡器

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摘要

We report resonant tunneling diode (RTD) oscillators with a high output power of around 400 μW at frequencies of 530-590 GHz. RTDs with a graded emitter and thin barriers were employed to obtain large negative differential conductance at high frequencies for high output power. An optimized structure of offset slot antennas was also used to maximize the radiation conductance. The highest output power obtained in this study was 420 μW at 548 GHz for an RTD with a peak current density of 24 mA/μm~2; the RTD was placed 58 nm apart from the center of a 130-μm-long slot antenna.
机译:我们报告了共振隧穿二极管(RTD)振荡器,其在530-590 GHz的频率下具有约400μW的高输出功率。采用具有渐变发射极和薄势垒的RTD,可在高频下获得较大的负差分电导,以实现高输出功率。偏移缝隙天线的优化结构也用于最大化辐射电导。对于峰值电流密度为24 mA /μm〜2的RTD,在本研究中获得的最高输出功率在548 GHz下为420μW。 RTD放置在距离130μm长缝隙天线中心58 nm处。

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  • 来源
    《Annales de l'I.H.P》 |2011年第6期|p.064101.1-064101.3|共3页
  • 作者单位

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan;

    NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan;

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