Linewidth of Low-Field Electrically Detected Magnetic Resonance of Phosphorus in Isotopically Controlled Silicon

摘要

The linewidth of the low-field electrically detected magnetic resonance (LFEDMR) of phosphorus electrons in silicon is investigated using samples with various ~(29)Si nuclear spin fractions and is compared to that of X-band electron paramagnetic resonance (EPR). The linewidths of LFEDMR and EPR are the same even though LFEDMR signals are obtained based on spin-dependent recombination, suggesting that the interaction between electron spins of phosphorus and recombination centers is strong enough for the LFEDMR detection but weak enough not to affect the linewidths. This favorable balance makes LFEDMR an attractive method to elucidate the low-field behavior of paramagnetic defects in semiconductors.