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ZnO-ZnS Porous Films by Sulfidation of Three-Dimensional ZnO Porous Templates: Evolution of Inward Growth during Sulfidation Process

机译:三维ZnO多孔模板的硫化ZnO-ZnS多孔膜:硫化过程中向内生长的演变

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摘要

ZnO-ZnS porous films were formed by low-temperature sulfidation of three-dimensional (3D) ZnO porous templates. The conversion of ZnO to ZnS initialized at the ZnO surface, accompanied by volume expansion. ZnS grains were preferentially formed at the surface of ZnO blocking the pseudotriangular pores. During sulfidation, voids were generated at the interfaces between ZnO and the silicon substrate because of the Kirkendall effect. However, Kirkendall voids were refilled with ZnS grains by further sulfidation. Results indicate that the unique and complex structure of 3D ZnO porous templates facilitated the change of the ZnS growth mechanism from outward to inward.
机译:ZnO-ZnS多孔膜是通过对3维(3D)ZnO多孔模板进行低温硫化而形成的。 ZnO向ZnS的转化在ZnO表面开始,并伴随体积膨胀。 ZnS晶粒优先在ZnO的表面形成,堵塞了假三角孔。在硫化过程中,由于柯肯德尔效应,在ZnO和硅衬底之间的界面处产生了空隙。但是,通过进一步硫化,柯肯达尔(Kirkendall)空隙被ZnS晶粒重新填充。结果表明3D ZnO多孔模板的独特而复杂的结构促进了ZnS生长机理从外向内的变化。

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  • 来源
    《_Applied Physics Express》 |2013年第9期|095501.1-095501.4|共4页
  • 作者

    Hung Bae Ahn; Jeong Yong Lee;

  • 作者单位

    Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea;

    Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon 305-701, Republic of Korea Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea;

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