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Zr_(0.05)Ti_(0.95)O_2-Nanowire-Based Ultraviolet Photodetector with Self-Powered Properties

机译:具有自供电特性的Zr_(0.05)Ti_(0.95)O_2-纳米线基紫外光电探测器

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摘要

Zr_(0.05)Ti_(0.95)O_2 solid solution nanowires were synthesized directly on a SnO_2:F-coated glass via a low-temperature hydrothermal method, and a high-sensitivity self-powered ultraviolet detector based on SnO_2:F/Zr_(0.05)Ti_(0.95)O_2 heterojunction was fabricated subsequently. Zr doping not only improves the detector's photoresponse but also adjusts the response range to the short-wavelength direction. At 0 V bias, a highly responsivity of 1.03A/W and an internal gain of 3.6 were obtained, together with favorable visible-blind characteristics and short response time. This high-sensitivity self-powered ultraviolet detector provides potential applications in wireless environmental monitoring, biological detection, and ultraviolet astronomy.
机译:通过低温水热法直接在镀有SnO_2:F的玻璃上合成Zr_(0.05)Ti_(0.95)O_2固溶体纳米线,并基于SnO_2:F / Zr_(0.05随后制备了Ti_(0.95)O_2异质结。 Zr掺杂不仅可以改善检测器的光响应,还可以将响应范围调整到短波长方向。在0 V偏压下,可获得1.03A / W的高响应度和3.6的内部增益,以及良好的可见盲特性和较短的响应时间。这种高灵敏度的自供电紫外线探测器可在无线环境监测,生物探测和紫外线天文学中提供潜在的应用。

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  • 来源
    《_Applied Physics Express》 |2013年第6期|062002.1-062002.4|共4页
  • 作者单位

    State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012, People's Republic of China,School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, U.S.A.;

    State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012, People's Republic of China;

    College of Instrument Science & Electrical Engineering, Jilin University, Changchun 130061, People's Republic of China;

    State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012, People's Republic of China;

    School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, U.S.A.;

    School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, U.S.A.;

    State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012, People's Republic of China;

    State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012, People's Republic of China;

    State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012, People's Republic of China;

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