Anodic Bonding of Transparent Conductive Oxide Coated Silicon Wafer to Glass Substrate for Solar Cell Applications

摘要

We report on the anodic bonding of Si wafer coated by thin transparent conductive oxide (TCO) with a glass substrate, for the first time. We obtained sufficient bonding strength of as high as 9.5 MPa using a 30-nm-thick indium tin oxide (ITO) layer. We have also found that the ITO sample shows much stronger bonding strength does a sample that with a zinc oxide layer. The bonding mechanism is discussed in terms of the permeation of indium elements into the glass side driven by electric field. Finally we demonstrated a solar cell using this substrate.