Effect of high voltage stress on the DC performance of the Al_2O_3/AlN GaN metal-insulator-semiconductor high-electron mobility transistor for power applications

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Effect of high voltage stress on the DC performance of the Al_2O_3/AlN GaN metal-insulator-semiconductor high-electron mobility transistor for power applications

机译：高压应力对电源应用Al_2O_3 / AlN GaN金属绝缘体半导体高电子迁移率晶体管的直流性能的影响

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《Applied physics express 》 |2015年第10期| 104102.1-104102.4| 共4页
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1. Threshold voltage modulation mechanism of AIGaN/GaN metal-insulator-semiconductor high-electron mobility transistors with fluorinated Al_2O_3 as gate dielectrics [J] . Chao Chen, Xingzhao Liu, Jihua Zhang, Applied Physics Letters . 2012 ,第13期

机译：以氟化Al_2O_3为栅极电介质的AIGaN / GaN金属绝缘体半导体高电子迁移率晶体管的阈值电压调制机制
2. Enhancement-mode Al_2O_3/InAlN/AlN/GaN metal-insulator-semiconductor high-electron-mobility transistor with enhanced breakdown voltage using fluoride-based plasma treatment [J] . ShengLei Zhao, JunShuai Xue, Peng Zhang, _Applied Physics Express . 2014 ,第7期

机译：氟化物基等离子体处理的增强型击穿电压具有增强模式的Al_2O_3 / InAlN / AlN / GaN金属绝缘体半导体高电子迁移率晶体管
3. Threshold Voltage Instability in AI_2O_3/GaN/AIGaN/GaN Metal-Insulator-Semiconductor High-Electron Mobility Transistors [J] . Sen Huang, Shu Yang, John Roberts, Japanese journal of applied physics . 2011 ,第11Issue1期

机译：AI_2O_3 / GaN / AIGaN / GaN金属-绝缘体-半导体高电子迁移率晶体管中的阈值电压不稳定性
4. Degradation of GaN high-electron mobility transistors in voltage step stress [C] . Wang Xinhua, Pang Lei, Wang Jianhui, 2012 IEEE International Integrated Reliability Workshop Final Report. . 2012

机译：GaN高电子迁移率晶体管在电压阶跃应力中的降解
5. Technologies to Improve GaN-Based LLC Resonant Converter for Wide Input Voltage, High Output Current AC-DC and DC-DC Applications [D] . Sheng, Bo. 2020

机译：改进GaN的LLC谐振转换器的技术，用于宽输入电压，高输出电流AC-DC和DC-DC应用
6. High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates [O] . Idriss Abid, Riad Kabouche, Catherine Bougerol, 2019

机译：AlN /蓝宝石模板上的薄沟道AlGaN / GaN高电子迁移率晶体管中的高横向击穿电压
7. High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application [O] . Weijun Zhou, Qing Ye, Junyu Dai, 2021

机译：用于电源开关应用的高压Alinn / GaN超结翅栅高电子移动晶体管

Effect of high voltage stress on the DC performance of the Al_2O_3/AlN GaN metal-insulator-semiconductor high-electron mobility transistor for power applications

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