Ultra-flexible short-channel organic field-effect transistors

摘要

We fabricated extremely flexible short-channel (2 μm channel length) organic thin-film transistors in a bottom-contact architecture. The transistors demonstrated excellent mechanical stability under systematic bending tests at a bending radius as small as 600 μm and were durable against severe device crumpling. The mechanical stability benefited from the thinness of the base film (1-μm-thick parylene diX-SR) and encapsulation as well as the utilization of a self-assembled-layer contact-modified staggered structure with a polymeric gate dielectric. The proposed approach is an important step in realizing flexible large-area sensors and high-frequency ultra-flexible circuits.