ZnSe-based organic-inorganic hybrid structure ultraviolet avalanche photodiodes with long lifetime and its device integration

摘要

We have developed organic [poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)]-inorganic [ZnSSe] hybrid structure ultraviolet avalanche photodiodes (UV-APDs) with a long device lifetime and integrated APD arrays. The active layer is ZnSSe grown by molecular beam epitaxy (MBE) and the window p~*-type layer is PEDOTPSS formed by the inkjet method. The device exhibits a lifetime of more than 100d and an APD operation of more than 500 times. We integrated 3-element APD array separated only by a window spot of PEDOT:PSS. The present array device in the APD operation shows no detectable photosignal cross-talk between the neighboring APDs.