首页> 外文期刊>Applied physics express >Controlled superconductivity in infinite-layer Sr_(0.875)La_(0.125)CuO_2 films sputter-deposited on Ba_ySr_(1-y)TiO_3 buffer layers
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Controlled superconductivity in infinite-layer Sr_(0.875)La_(0.125)CuO_2 films sputter-deposited on Ba_ySr_(1-y)TiO_3 buffer layers

机译:溅射沉积在Ba_ySr_(1-y)TiO_3缓冲层上的无限层Sr_(0.875)La_(0.125)CuO_2薄膜中的受控超导性

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摘要

We present a systematic study of the structural and electrical properties of electron-doped infinite-layer Sr_(0.875)La_(0.125)CuO_2 (SLCO) thin films grown on Ba_ySr_(1-y)TiO_3 (BSTO; y= 0.2-0.7) buffer layers. The BSTO (y = 0.2-0.6) buffer layers were found to allow the coherent growth of SLCO thin films. The coherently tensile-strained SLCO thin films grown on BSTO (y = 0.6) buffer layers at a low deposition rate of 0.2 nm/min showed a low room-temperature resistivity (118 μΩ cm) and a high T_c (36 K). All the other SLCO thin films exhibited a reduced T_c of around 20 K. The present results are discussed in terms of correlation among epitaxial strain, c_(SLCO)/a_(SLCO) ratio, and T_c.
机译:我们目前对在Ba_ySr_(1-y)TiO_3(BSTO; y = 0.2-0.7)上生长的电子掺杂无限层Sr_(0.875)La_(0.125)CuO_2(SLCO)薄膜的结构和电性能进行系统研究缓冲层。发现BSTO(y = 0.2-0.6)缓冲层允许SLCO薄膜的连贯生长。在BSTO(y = 0.6)缓冲层上以0.2 nm / min的低沉积速率生长的相干拉伸应变SLCO薄膜显示出较低的室温电阻率(118μΩcm)和较高的T_c(36 K)。所有其他SLCO薄膜都显示出约20 K的降低的T_c。本文根据外延应变,c_(SLCO)/ a_(SLCO)比和T_c之间的相关性讨论了本结果。

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  • 来源
    《Applied physics express》 |2016年第2期|023101.1-023101.4|共4页
  • 作者单位

    Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8603, Japan;

    Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8603, Japan;

    Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8603, Japan;

    Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8603, Japan;

    Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8603, Japan;

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