Low-threshold-current yellow BeZnCdSe quantum-well ridge-waveguide laser diodes under continuous-wave room-temperature operation

摘要

Low-threshold-current yellow BeZnCdSe single-quantum-well (SQW) laser diodes (LDs) have been developed by using a ridge-waveguide structure. The top p-cladding layer was etched to suppress the leakage current that flowed laterally outside of the electrode. Ridge waveguides were covered with a SiO_2 layer and planarized by chemical-mechanical polishing and reactive ion etching. Room-temperature lasing under continuous-wave condition was achieved with the laser cavity formed by cleaved waveguide facets coated with high-reflectivity dielectric films. Two types of LDs with different SQW thicknesses and Cd contents were developed and compared at various waveguide widths and lengths. Yellow LDs with sub-10 mA threshold current were obtained.