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Wideband and High-Gain Corporate-Fed Gap Waveguide Slot Array Antenna With ETSI Class II Radiation Pattern in V -Band

机译:V波段具有ETSI II类辐射方向图的宽带高增益企业馈电间隙波导缝隙阵列天线

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摘要

We present a V -band multilayer corporate-fed slot array antenna with wide impedance bandwidth and high efficiency. The proposed antenna consists of three unconnected metal layers based on the recently introduced gap waveguide technology. A 2×2 cavity-backed slot subarray acts as the unit cell of the array. The top metal layer contains the radiating slots, the intermediate layer contains the cavities, formed by pins, and the third layer is the ridge gap waveguide corporate-feed network. The latter is realized by a texture of pins and guiding ridges to uniformly excite the cavities with the same amplitude and phase. The proposed antenna fulfills the radiation pattern requirement of the ETSI 320 standard. A prototype consisting of 16×16 slots was manufactured by a fast modern planar 3-D machining method, i.e., die-sink electric discharge machining. The fabricated prototype has a relative impedance bandwidth of 17.6% with input reflection coefficient better than −10 dB. The E- and H-planes radiation patterns satisfy the ETSI class II copolar sidelobe envelope, and the measured cross-polar level is more than −30 dB below the copolar level over the 56–75 GHz frequency band. The measured antenna efficiency is better than 60% over the same band.
机译:我们提出了具有宽阻抗带宽和高效率的V波段多层公司馈电缝隙阵列天线。拟议的天线由基于最新引入的间隙波导技术的三个未连接的金属层组成。 2×2腔背隙缝隙子阵列用作阵列的单位单元。顶层金属层包含辐射槽,中间层包含由销钉形成的空腔,第三层是脊隙波导公司馈电网络。后者是通过销钉和引导脊的纹理来实现的,以均匀地激发具有相同幅度和相位的空腔。拟议的天线满足ETSI 320标准的辐射方向图要求。通过快速的现代平面3-D加工方法(即模沉放电加工)制造了由16×16槽组成的原型。所制造的原型的相对阻抗带宽为17.6%,输入反射系数优于-10 dB。 E平面和H平面的辐射方向图满足ETSI II类同极旁瓣包络,在56-75 GHz频带上,测得的交叉极电平比同极电平低-30 dB以上。在相同频段上测得的天线效率优于60%。

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