Compute simulations of diffraction effect s due to stacking faults in β-SiC: I, simulation results

摘要

X-ray diffraction (XRD) patterns from nominally β-SiC specimens often differ from those expected for the cubic crystal structure. These differences include the presence of additional peaks, enhanced background intensities, peak broadening, changes in relative peak heights, and shifts in peak positions. It has long been recognized that they are due to the presence of stacking faults, and models relating the experimental observations to stacking fault population have continued to evolve.