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Discovery of New Narrow-Band Phosphors with the UCr4C4-Related Type Structure by Alkali Cation Effect

机译:通过碱阳离子效应发现UCR4C4相关型结构的新窄带磷光体

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摘要

Narrow-band luminescence materials used in white light-emitting diodes (WLEDs) have demonstrated a great potential to increase the maximum accessible color gamut, improve the color rendition, or enhance the visual luminous efficacy for illumination and display devices. So far, the discovery of narrow-band rare earth doped phosphors for emerging applications remains challenging owing to the limited systems in use and the broadening effect of 4f-5d transition. Here, two narrow-band cyan-emitting phosphors with the UCr4C4-related type structure, RbNa2K(Li3SiO4)(4):Eu2+ (RNKLSO:Eu2+) and CsNa2K(Li3SiO4)(4):Eu2+ (CNKLSO:Eu2+), are reported. The narrow-band emission results from the highly condensed network and a cube-like site for the activator (Eu2+). The emission peak assignments are investigated, and the variations of luminescence behavior with compositional changes of alkali cations are elaborated in detail. RNKLSO:8% Eu2+ (95%@250 degrees C of the integrated emission intensity at 25 degrees C) shows better thermal stability than that of CNKLSO:8% Eu2+ (79%@250 degrees C), which can be explained by the thermally activated crossover process represented in the configurational coordinate diagram. The optical properties of the as-fabricated WLEDs are studied and demonstrate potential with tunable properties for the full spectrum phosphor-converted LEDs. These findings in UCr4C4-type phases help shedding light on new avenues for fabricating new and totally unexpected narrow-emitting phosphors with versatile applications.
机译:用于白色发光二极管(WLED)的窄带发光材料已经证明了增加最大可接近色域,改善颜色再现的潜力,或提高照明和显示装置的视觉发光功效。到目前为止,由于使用的系统有限和4F-5D过渡的促进效果,窄带稀土掺杂磷光体的发现仍然挑战。这里,报告。窄带发射由高浓缩网络和用于活化剂(EU2 +)的立方体状部位产生。研究了发射峰分配,详细阐述了碱阳离子的组成变化的发光行为的变化。 RNKLSO:8%EU2 +(25℃的集成发射强度的95%C)显示出比CNKLSO的更好的热稳定性:8%EU2 +(79%@ 250℃),这可以通过热量解释在配置坐标图中表示的激活的交叉处理。研究了AS制造的WLED的光学性质,并展示了具有全谱磷光体转换的LED的可调性的电位。在UCR4C4型阶段的这些发现有助于在新的途径上脱落,以制造具有多功能应用的新的和完全意外的窄荧光体。

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  • 来源
    《Advanced Optical Materials》 |2019年第6期|1801631.1-1801631.9|共9页
  • 作者单位

    Univ Sci & Technol Beijing Sch Mat Sci & Engn Beijing Municipal Key Lab New Energy Mat & Techno Beijing 100083 Peoples R China;

    South China Univ Technol State Key Lab Luminescent Mat & Devices Guangzhou 510641 Guangdong Peoples R China|South China Univ Technol Guangdong Prov Key Lab Fiber Laser Mat & Appl Tec Guangzhou 510641 Guangdong Peoples R China;

    Fed Res Ctr KSC SB RAS Lab Crystal Phys Kirensky Inst Phys Krasnoyarsk 660036 Russia|Siberian Fed Univ Dept Engn Phys & Radioelect Krasnoyarsk 660041 Russia|Far Eastern State Transport Univ Dept Phys Khabarovsk 680021 Russia;

    South China Univ Technol State Key Lab Luminescent Mat & Devices Guangzhou 510641 Guangdong Peoples R China|South China Univ Technol Guangdong Prov Key Lab Fiber Laser Mat & Appl Tec Guangzhou 510641 Guangdong Peoples R China;

    Univ Sci & Technol Beijing Sch Mat Sci & Engn Beijing Municipal Key Lab New Energy Mat & Techno Beijing 100083 Peoples R China;

    Univ Sci & Technol Beijing Sch Mat Sci & Engn Beijing Municipal Key Lab New Energy Mat & Techno Beijing 100083 Peoples R China|South China Univ Technol State Key Lab Luminescent Mat & Devices Guangzhou 510641 Guangdong Peoples R China|South China Univ Technol Guangdong Prov Key Lab Fiber Laser Mat & Appl Tec Guangzhou 510641 Guangdong Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    narrow-band emission; phosphors; photoluminescence; substitution strategy; white light-emitting diodes;

    机译:窄带发射;荧光粉;光致发光;替换策略;白色发光二极管;

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