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Lead-Free Perovskite Derivative Cs_2SnCl_(6−x)Br_x Single Crystals for Narrowband Photodetectors

机译:用于窄带光电探测器的无铅钙钛矿衍生物Cs_2SnCl_(6-x)Br_x单晶

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摘要

Lead-free and stable Sn halide perovskites demonstrate tremendous potential in the field of optoelectronic devices. Here, the structure and optical properties of the defect perovskites Cs2SnCl6-xBrx are reported, as well as their use as photodetector materials. Millimeter-sized Cs2SnCl6-xBrx single crystals are grown by the hydrothermal method, with the body color continuously changing from transparent to yellow and finally to dark red. Narrowband single-crystal photodetectors using Cs2SnCl6-xBrx crystals are presented, which show a high detectivity of approximate to 2.71 x 10(10) Jones, with narrowband photodetection (full-width at half-maximum approximate to 45 nm) and high ion diffusion barriers. Moreover, the response spectra are continuously tuned from near violet to orange depending on the variation of the bandgap of the single crystals by changing the halide compositions. The strong surface charge recombination of the excess carriers near the crystal surfaces produced by short wavelength light elucidates the narrowband photodetection behavior. This work provides a new paradigm in the design of lead-free, stable, and high-performance perovskite derivatives for optoelectronics applications.
机译:无铅且稳定的卤化锡钙钛矿在光电设备领域显示出巨大的潜力。在这里,报告了钙钛矿缺陷Cs2SnCl6-xBrx的结构和光学性质,以及它们作为光电探测器材料的用途。通过水热法可生长出毫米大小的Cs2SnCl6-xBrx单晶,其体色不断地从透明变为黄色,最后变为深红色。提出了使用Cs2SnCl6-xBrx晶体的窄带单晶光电探测器,该探测器显示出约2.71 x 10(10)Jones的高检测率,具有窄带光电检测(半峰全宽约为45 nm)和高离子扩散势垒。而且,通过改变卤化物的组成,取决于单晶的带隙的变化,响应光谱从近紫光连续调到橙光。短波长光在晶体表面附近产生的多余载流子的强表面电荷重组,阐明了窄带光检测行为。这项工作为光电子应用中的无铅,稳定和高性能钙钛矿衍生物的设计提供了新的范例。

著录项

  • 来源
    《Advanced Optical Materials》 |2019年第10期|1900139.1-1900139.7|共7页
  • 作者单位

    Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China;

    HUST, Sargent Joint Res Ctr, WNLO, Wuhan 430074, Hubei, Peoples R China|HUST, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China;

    Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Flexible Memory Mat & Devices, Shenzhen 518060, Peoples R China|Shenzhen Univ, Coll Optoelect Engn, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov, Shenzhen 518060, Peoples R China;

    Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China;

    Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Lab Crystal Phys, Krasnoyarsk 660036, Russia|Siberian Fed Univ, Dept Engn Phys & Radioelect, Krasnoyarsk 660041, Russia|Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia;

    Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Flexible Memory Mat & Devices, Shenzhen 518060, Peoples R China|Shenzhen Univ, Coll Optoelect Engn, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov, Shenzhen 518060, Peoples R China;

    Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China;

    Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China;

    Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Flexible Memory Mat & Devices, Shenzhen 518060, Peoples R China;

    HUST, Sargent Joint Res Ctr, WNLO, Wuhan 430074, Hubei, Peoples R China|HUST, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China;

    Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China|South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510641, Guangdong, Peoples R China|South China Univ Technol, Inst Opt Commun Mat, Guangzhou 510641, Guangdong, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    band structure; Cs2SnBr6; Cs2SnCl6; lead-free perovskite derivatives; narrowband photodetection;

    机译:带结构;Cs2SnBr6;Cs2SnCl6;无铅钙钛矿衍生物;窄带光检测;

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