Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

摘要

The past half of a century has witnessed the extension of Moore's law which describes the doubling of transistor density in an integrated circuit every two years or so. However, traditional charge based flash memories now face significant challenges as the transistor size decreases further into nano-regime. As one of the most promising candidates for future non-volatile memories, resistive random access memory (RRAM) with a simple sandwiched structure exhibits attractive performance metrics including excellent scaling potential, low power consumption, high speed, and good endurance.