High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

Shim Jaewoo; Oh Aely; Kang Dong-Ho; Oh Seyong; Jang Sung Kyu; Jeon Jaeho; Jeon Min Hwan; Kim Minwoo; Choi Changhwan; Lee Jaehyeong; Lee Sungjoo; Yeom Geun Young; Song Young Jae; Park Jin-Hong

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High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

机译：氧等离子体处理的高性能二维二硫化hen（ReS2）晶体管和光电探测器

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A high-performance ReS2-based thin-film transistor and photodetector with high on/off-current ratio (10(4)), high mobility (7.6 cm(2) V-1 s(-1)), high photoresponsivity (2.5 x 10(7) A W-1), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O-2 plasma treatment is reported.

机译：高性能的基于ReS2的薄膜晶体管和光电探测器，具有高的开/关电流比（10（4）），高迁移率（7.6 cm（2）V-1 s（-1）），高光响应性（2.5 x 10（7）A W-1）和通过O-2等离子体处理的快速时间响应（分别为670 ms和5.6 s的上升和衰减时间）。

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来源
《Advanced Materials》 |2016年第32期|6985-6992|共8页
作者
Shim Jaewoo; Oh Aely; Kang Dong-Ho; Oh Seyong; Jang Sung Kyu; Jeon Jaeho; Jeon Min Hwan; Kim Minwoo; Choi Changhwan; Lee Jaehyeong; Lee Sungjoo; Yeom Geun Young; Song Young Jae; Park Jin-Hong;
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Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 440746, South Korea;

Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 440746, South Korea;

Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 440746, South Korea;

Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 440746, South Korea;

Ungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Suwon 440746, South Korea;

Ungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Suwon 440746, South Korea;

Ungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Suwon 440746, South Korea;

Ungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Suwon 440746, South Korea;

Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea;

Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 440746, South Korea;

Ungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Suwon 440746, South Korea;

Ungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Suwon 440746, South Korea;

Ungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Suwon 440746, South Korea;

Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 440746, South Korea;

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2. Anomalous Broadband Spectrum Photodetection in 2D Rhenium Disulfide Transistor [J] . Xiang Du, Liu Tao, Wang Junyong, Advanced Optical Materials . 2019,第23期

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3. Magnetic properties of rhenium disulfide (ReS2) monolayer doped with different nonmetal atoms [J] . Luo M., Xu Y. E. Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic . 2018,第期

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4. Silicon-compatible resonant plasma-wave transistor with 2D silicene channel for high-performance terahertz electromagnetic wave emitters [C] . Park Jong Yul, Kim Sung-Ho, Kim Kyung Rok IEEE Silicon Nanoelectronics Workshop . 2015

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机译：在碳纤维增强的聚合物上进行氩氧常压等离子体处理，以改善粘合性。
6. All-2D ReS2 transistors with split gates for logic circuitry [O] . Junyoung Kwon, Yongjun Shin, Hyeokjae Kwon, -1

机译：具有逻辑门分离栅极的全2D ReS2晶体管
7. Light‐Assisted and Gate‐Tunable Oxygen Gas Sensor Based on Rhenium Disulfide Field‐Effect Transistors [O] . Amir Zulkefli, Bablu Mukherjee, Ryoma Hayakawa, 2020

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High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

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