Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate

摘要

Anisotropic 2D layered material rhenium disulfi de (ReS2) with high crystal quality and uniform monolayer thickness is synthesized by using tellurium-assisted epitaxial growth on mica substrate. Benefit from the lower eutectic temperature of rhenium-tellurium binary eutectic, ReS2 can grow from rhenium (melting point at 3180 degrees C) and sulfur precursors in the temperature range of 460-900 degrees C with high efficiency.