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首页> 外文期刊>Advanced Functional Materials >Magnetism and Phase Formation in the Candidate Dilute Magnetic Semiconductor System In_(2-x)Cr_xO_3: Bulk Materials are Dilute Paramagnets
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Magnetism and Phase Formation in the Candidate Dilute Magnetic Semiconductor System In_(2-x)Cr_xO_3: Bulk Materials are Dilute Paramagnets

机译:候选稀磁半导体系统In_(2-x)Cr_xO_3中的磁性和相形成:块状材料是稀顺磁性。

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摘要

Well-characterized bulk materials in the candidate dilute magnetic semiconductor system In_(2-x)Cr_xO_3 are prepared for 0 ≤ x < 0.15, with cation site preferences in the bixbyite structure identified by diffraction methods. Small ferromagnetic moments are observed; their size ( < 10~(-2) μ_B/dopant ion) is not consistent with bulk ferromagnetism. The resulting bulk materials display dilute paramagnetic behaviour, with all of the moment expected per Cr_(3+) cation dopant being involved in this paramagnetic response.
机译:候选稀磁半导体系统In_(2-x)Cr_xO_3中表征良好的块状材料的制备条件是0≤x <0.15,并通过衍射方法确定了方铁矿结构中的阳离子位置偏爱。观察到小的铁磁矩;它们的大小(<10〜(-2)μB/掺杂离子)与体铁磁性不一致。所得的块状材料显示出稀的顺磁行为,而每个Cr_(3+)阳离子掺杂剂预期的所有时刻都参与了该顺磁响应。

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