A General Approach to Semimetallic, Ultra-High-Resolution, Electron-Beam Resists

摘要

Commercial electron-beam resists are modified into semimetallic resists by doping with 1-3 nm metal nanoparticles, which improve the resolution, contrast, strength, dry-etching resistance, and other properties of the resist. With the modified resists, fine resist nanopatterns from electron-beam lithography are readily converted into 5-50 nm, high-quality multilayers for metallic nanosensors or nanopatterns via ion-beam etching. This method solves the problem of the fabrication of fine (<50 nm) metallic nanodevices via pattern transferring.