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Hierarchical Chemical Bonds Contributing to the Intrinsically Low Thermal Conductivity in alpha-MgAgSb Thermoelectric Materials

机译:分层化学键有助于α-MgAgSb热电材料的固有低热导率

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摘要

Understanding the lattice dynamics and phonon transport from the perspective of chemical bonds is essential for improving and finding high-efficiency thermoelectric materials and for many applications. Here, the coexistence of global and local weak chemical bonds is elucidated as the origin of the intrinsically low lattice thermal conductivity of non-caged structure Nowotny-Juza compound, alpha-MgAgSb, which is identified as a new type of promising thermoelectric material in the temperature range of 300-550 K. The global weak bonds of the compound lead to a low sound velocity. The unique three-centered Mg-Ag-Sb bonds in alpha-MgAgSb vibrate locally and induce low-frequency optical phonons, resulting in "rattling-like" thermal damping to further reduce the lattice thermal conductivity. The hierarchical chemical bonds originate from the low valence electron count of alpha-MgAgSb, with the feature shared by Nowotny-Juza compounds. Low lattice thermal conductivities are therefore highly possible in this series of compounds, which is verified by phonon and bulk modulus calculations on some of the compositions.
机译:从化学键的角度了解晶格动力学和声子传输对改进和发现高效热电材料以及许多应用至关重要。在这里,整体和局部弱化学键的共存被阐明为非笼状结构Nowotny-Juza化合物α-MgAgSb本质上较低的晶格热导率的起源,α-MgAgSb被确定为一种新型的有前途的热电材料。温度范围为300-550K。化合物的整体弱键导致音速低。 alpha-MgAgSb中独特的三心Mg-Ag-Sb键局部振动并产生低频光学声子,从而产生“类似棘手”的热阻尼,从而进一步降低了晶格的导热性。分层化学键源自α-MgAgSb的低价电子数,具有Nowotny-Juza化合物共有的特征。因此,在这一系列化合物中极有可能实现低晶格热导率,这已通过对某些组合物进行声子和体积模量计算得到了证实。

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  • 来源
    《Advanced Functional Materials》 |2017年第1期|1604145.1-1604145.8|共8页
  • 作者单位

    Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China;

    Shanghai Univ, Mat Genome Inst, 99 Shangda Rd, Shanghai 200444, Peoples R China;

    Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China;

    Shanghai Univ, Mat Genome Inst, 99 Shangda Rd, Shanghai 200444, Peoples R China;

    Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China;

    Shanghai Univ, Mat Genome Inst, 99 Shangda Rd, Shanghai 200444, Peoples R China;

    Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China;

    Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China;

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