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Polarity related problems in growth of GaN homoepitaxial layers

机译:GaN同质外延层生长中与极性相关的问题

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Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals crystals obtained by high-pressure, high-tem- perature technology. For each metalorganic chemical vapour deposition run, four samples were placed.(00.1) and (00.1) faces of the Mg-doped insu- lating and undoped highly-conductive substrates. The layers were exam- ined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1) easier incorporates donors resulting in higher Free-electron concentrations in the layers grown on these sides of the crystals, Both, undoped and Mg-doped.
机译:GaN的同质外延层是通过有机金属化学气相沉积法沉积在通过高压,高温技术获得的单晶晶体上的。对于每个有机金属化学气相沉积操作,均放置了四个样品。掺镁的绝缘和非掺杂高导电性基材的面(00.1)和(00.1)。使用X射线衍射,光致发光和远红外反射率对层进行检查。发现(00.1)更容易掺入施主,从而在晶体的这些侧面(未掺杂和掺杂Mg)上生长的层中导致较高的自由电子浓度。

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