Effect of intensive interlevel transitions in quantum well and strong spin-orbit interaction on weak localization is considered. Anomalous magne- toresistance in classically weak fields is calculated for p-type quantum wells based on A_3B_5 semiconductors. It is shown that the sign of magnetoresis- tance changes with varying doping level and the role of the intersubband transitions in weak localization effects depends dramatically on a view of the scattering potential.
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