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New Triphenylamine-Based Oligomeric Schiff Bases Containing Tetraphenylsilane Moieties in the Backbone

机译:骨架中含有四苯基硅烷部分的新的基于三苯胺的低聚席夫碱

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摘要

Three new triphenylamine-based oligomeric Schiff bases (polySB1, polySB2 and polySB3) containing tetraphenylsilane core (TPS-core) in the main chain were obtained from TPS-core-based diamines and bis(4-formylphenyl)phenylamine by a high-temperature polycondensation reaction. These new oligomers were structurally characterized by FT-IR, NMR and elemental analysis. All polySBs were highly soluble in common organic solvents, such as chloroform, tetrahydrofuran and chlorobenzene. Samples showed moderate molecular average molecular weight (Mw) and a high thermal stability above 410 °C. Likewise, polySBs showed absorption near 400 nm in the UV-vis range and photoluminescence. The HOMO levels and band-gap values were found in the ranges of −6.06 to −6.18 eV and 2.65–2.72 eV, respectively. The lowest band-gap value was observed for polySB2, which could be attributed to a more effective π-conjugation across the main chain. The results suggest that silicon-containing polySBs are promising wide-band-gap semiconductors materials for optoelectronic applications.
机译:从TPS核基二胺和双(4-甲酰基苯基)苯胺经高温缩聚反应,获得了三种主链上含有四苯基硅烷核(TPS核)的新型三苯胺基低聚席夫碱(polySB1,polySB2和polySB3)。反应。这些新的低聚物通过FT-IR,NMR和元素分析进行​​结构表征。所有的polySB都高度溶于常见的有机溶剂,例如氯仿,四氢呋喃和氯苯。样品在410°C以上显示中等的分子平均分子量(Mw)和高的热稳定性。同样,polySB在UV-vis范围内显示了在400 nm附近的吸收和光致发光。发现HOMO水平和带隙值分别在-6.06至-6.18 eV和2.65-2.72 eV的范围内。对于polySB2,观察到了最低的带隙值,这可以归因于整个主链上更有效的π-共轭。结果表明,含硅的polySB有望用于光电子应用的宽带隙半导体材料。

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