class='head no_bottom_margin' id='sec1title'>Int'/> Millimeter-Scale Nonlocal Photo-Sensing Based on Single-Crystal Perovskite Photodetector
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Millimeter-Scale Nonlocal Photo-Sensing Based on Single-Crystal Perovskite Photodetector

机译:基于单晶钙钛矿光电探测器的毫米级非局部光敏

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class="head no_bottom_margin" id="sec1title">IntroductionOrganometal trihalide perovskites (OTPs), a new family of optoelectronic materials, have recently attracted intense interest for photonic applications in photodetectors (, , , , , , ). Traditional OTP-based photodetectors based on solution-process polycrystalline OTP thin films show limited diffusion length (∼1 μm), resulting in many drawbacks in the photodetection performance (, , ). Thus, there is an urgent need to search for alternative materials with low trap states, long charge carrier lifetime, and long carrier diffusion length for the improvement of photodetectors (, , , ). Bulk perovskite single crystals with fewer grain boundaries are promising candidates with remarkable optoelectronic performances compared with traditional OTP thin films (, href="#bib17" rid="bib17" class=" bibr popnode">Ma et al., 2016, href="#bib21" rid="bib21" class=" bibr popnode">Saidaminov et al., 2015a, href="#bib24" rid="bib24" class=" bibr popnode">Shao et al., 2014, href="#bib25" rid="bib25" class=" bibr popnode">Shi et al., 2015, href="#bib31" rid="bib31" class=" bibr popnode">Yang et al., 2015, href="#bib32" rid="bib32" class=" bibr popnode">Zhang et al., 2016). Their excellent optoelectronic properties such as large absorption coefficient over a broad spectral range (href="#bib9" rid="bib9" class=" bibr popnode">Green et al., 2014), high charge carrier mobility (60 cm−2 V−1 s−1) (href="#bib22" rid="bib22" class=" bibr popnode">Saidaminov et al., 2015b, href="#bib25" rid="bib25" class=" bibr popnode">Shi et al., 2015), proper bandgap energy (2.2 eV) (href="#bib19" rid="bib19" class=" bibr popnode">Miyata et al., 2015), and long exciton diffusion length (7.5 μm) (href="#bib28" rid="bib28" class=" bibr popnode">Wei et al., 2016, href="#bib31" rid="bib31" class=" bibr popnode">Yang et al., 2015) have been exploited to realize high-sensitivity photo-sensing devices of different detection bands from X-ray to visible light (href="#bib6" rid="bib6" class=" bibr popnode">Fang et al., 2015, href="#bib18" rid="bib18" class=" bibr popnode">Mao et al., 2003, href="#bib22" rid="bib22" class=" bibr popnode">Saidaminov et al., 2015b). Besides, synthetic routes of bulk perovskite single crystals are very simple and rely on self-assembly, which offers the advantages of cost-effectiveness and large-scale manufacture (href="#bib3" rid="bib3" class=" bibr popnode">Dong et al., 2015a, href="#bib16" rid="bib16" class=" bibr popnode">Liu et al., 2015b, href="#bib31" rid="bib31" class=" bibr popnode">Yang et al., 2015). However, previously demonstrated OTP-based photodetectors only show a local photoresponse and the effective photo-sensing area in these devices is mainly the photodetector channel (href="#bib14" rid="bib14" class=" bibr popnode">Li et al., 2015, href="#bib22" rid="bib22" class=" bibr popnode">Saidaminov et al., 2015b) or the hybrid channel where OTPs are in contact with other photoactive nanomaterials (such as semiconductor [href="#bib5" rid="bib5" class=" bibr popnode">Dou et al., 2014, href="#bib28" rid="bib28" class=" bibr popnode">Wei et al., 2016], quantum dots [href="#bib15" rid="bib15" class=" bibr popnode">Liu et al., 2015a, href="#bib20" rid="bib20" class=" bibr popnode">Qian et al., 2017], or two-dimensional materials [href="#bib12" rid="bib12" class=" bibr popnode">Kang et al., 2016, href="#bib13" rid="bib13" class=" bibr popnode">Lee et al., 2015, href="#bib17" rid="bib17" class=" bibr popnode">Ma et al., 2016, href="#bib27" rid="bib27" class=" bibr popnode">Wang et al., 2015]). The position-dependent photodetectors based on perovskite single crystals have not been demonstrated yet, which leads to the insufficient development of its advantages in long diffusion length.In many photo-sensing applications, illumination is not always precisely shining onto specific device locations, resulting in no photoresponse or a small response derived from a fraction of the illuminating power (href="#bib8" rid="bib8" class=" bibr popnode">Ghosh et al., 2010, href="#bib23" rid="bib23" class=" bibr popnode">Sarker et al., 2017). To overcome those limitations, it is of great importance to develop position-dependent photodetectors that can be operated without precise illumination on the device channel and to examine their position-dependent photoresponse characteristics. Up to now, very limited previous work has demonstrated position-dependent photodetectors by the combination of graphene and SiC substrate or using reduced graphene oxide (href="#bib23" rid="bib23" class=" bibr popnode">Sarker et al., 2017, href="#bib8" rid="bib8" class=" bibr popnode">Ghosh et al., 2010). However, the coupling of two materials (graphene and SiC) hinders photoelectric conversion efficiency and position dependence range (500 μm) of the device. Besides, bulk perovskite single crystals show larger single-crystal area compared with graphene, and the long carrier diffusion length allows the photo-generated charge carriers to be transported farther in perovskite single crystals, which provides potential for position-sensitive photodetection applications (href="#bib25" rid="bib25" class=" bibr popnode">Shi et al., 2015).In this article, we use a single material, CH3NH3PbBr3 (MAPbBr3) single crystals, to realize the position-sensitive photodetectors. Hard mask and electron beam evaporation were utilized to define specifically shaped source and drain on the perovskite single crystals. By setting up a custom-designed optoelectronic test platform, the position-sensitive photoresponse characteristics of the photodetector was measured by a focused laser beam, showing both position sensitivity and large-area photodetection. This position-sensitive device presents local optoelectronic performance of an optimal responsivity of 51 mA/W, which is a reasonable value when compared with previous reports (href="#bib22" rid="bib22" class=" bibr popnode">Saidaminov et al., 2015b). A remarkable ratio of photocurrent and dark current of 9 indicates potential applications in the construction of integrated optoelectronic systems. Meanwhile, photoresponse can be achieved for laser illumination not only on the perovskite channel but also on the area millimeter range away from the device channel. Two more samples were fabricated to prove the repeatability of the experiment, and more details are shown in href="#mmc1" rid="mmc1" class=" supplementary-material">Figure S1. To the best of our knowledge, this is a record for millimeter-range distance detection. Finally, the position-sensitive photoresponse was qualitatively explained by finite element analysis based on the dependence of carrier diffusion and recombination under the change of electric field on the position of illumination near the device channel.
机译:<!-fig ft0-> <!-fig @ position =“ anchor” mode =文章f4-> <!-fig mode =“ anchred” f5-> <!-fig / graphic | fig / alternatives / graphic mode =“ anchored” m1-> class =“ head no_bottom_margin” id =“ sec1title”>简介一种新型的光电材料有机金属三卤化物钙钛矿(OTP),最近引起了人们的广泛关注光电探测器中光子应用的兴趣(,,,,,,)。基于固溶过程多晶OTP薄膜的传统基于OTP的光电探测器显示出有限的扩散长度(〜1μm),从而导致光电检测性能(``,'')存在许多缺陷。因此,迫切需要寻找具有低陷阱态,长的载流子寿命和长的载流子扩散长度的替代材料,以改善光电检测器(,,,)。与传统的OTP薄膜相比,具有较少晶界的块状钙钛矿单晶有望成为具有出色光电性能的候选材料(Ma,et al。,2016 href="#bib17" rid="bib17" class=" bibr popnode"> / a>,href="#bib21" rid="bib21" class=" bibr popnode">赛达米诺夫等人,2015a ,href =“#bib24” rid =“ bib24” class = “ bibr popnode”> Shao等人,2014 ,href="#bib25" rid="bib25" class=" bibr popnode"> Shi等人,2015 ,href =“#bib31” rid =“ bib31” class =“ bibr popnode”> Yang等人,2015 ,href="#bib32" rid="bib32" class=" bibr popnode">张等等,2016 )。它们具有优异的光电性能,例如在宽光谱范围内具有高吸收系数(href="#bib9" rid="bib9" class=" bibr popnode"> Green等人,2014 ),高载流子迁移率(60cm −2 V −1 s -1 )(href =“#bib22” rid =“ bib22” class = “ bibr popnode”> Saidaminov等,2015b ,href="#bib25" rid="bib25" class=" bibr popnode"> Shi等,2015 ),适当的带隙能量(2.2 eV)(href="#bib19" rid="bib19" class=" bibr popnode"> Miyata et al。,2015 )和长的激子扩散长度(7.5μm)(href =“#bib28” rid =“ bib28” class =“ bibr popnode”>魏等人,2016 ,href="#bib31" rid="bib31" class=" bibr popnode">杨et al。,2015 )已被用于实现从X射线到可见光的不同检测波段的高灵敏度光敏设备(href =“#bib6” rid =“ bib6” class =“ bibr popnode“> Fang等人,2015 ,href="#bib18" rid="bib18" class=" bibr popnode"> Mao等人,2003 ,href = ” #bib22“ rid =” bib22“ class =” bibr popnode“> Saidaminov等人,2015b )。此外,块状钙钛矿单晶的合成路线非常简单,并且依赖于自组装,这具有成本效益和大规模生产的优势(href =“#bib3” rid =“ bib3” class =“ bibr popnode“> Dong等人,2015a ,href="#bib16" rid="bib16" class=" bibr popnode"> Liu等人,2015b ,href =” #bib31“ rid =” bib31“ class =” bibr popnode“> Yang等人,2015 )。但是,以前展示的基于OTP的光电探测器仅显示局部光电响应,并且这些设备中的有效光电感应区域主要是光电探测器通道(href="#bib14" rid="bib14" class=" bibr popnode"> Li等人,2015 ,href="#bib22" rid="bib22" class=" bibr popnode"> Saidaminov等人,2015b )或与OTP联系的混合渠道与其他光敏纳米材料(例如半导体[href="#bib5" rid="bib5" class=" bibr popnode"> Dou等人,2014 ,href =“#bib28” rid = “ bib28” class =“ bibr popnode”>魏等人,2016 ],量子点[href="#bib15" rid="bib15" class=" bibr popnode">刘等人,, 2015a ,href="#bib20" rid="bib20" class=" bibr popnode">钱先生等,2017 ]或二维材料[href =“# bib12“ rid =” bib12“ class =” bibr popnode“> Kang等人,2016 ,href="#bib13" rid="bib13" class=" bibr popnode">李等人, 2015 ,href="#bib17" rid="bib17" class=" bibr popnode">等,2016 , href="#bib27" rid="bib27" class=" bibr popnode"> Wang等人,2015 ])。尚未证明基于钙钛矿单晶的位置相关光电探测器,这导致其漫长扩散长度优势的不足发展。在许多光敏应用中,照明并不总是精确地照在特定的设备位置上,导致没有光响应或一部分照明功率产生的小响应(href="#bib8" rid="bib8" class=" bibr popnode"> Ghosh等人,2010 ,href = “#bib23” rid =“ bib23” class =“ bibr popnode”> Sarker等人,2017 )。克服这些限制因此,开发可在无需在设备通道上精确照明的情况下操作的位置相关光电探测器以及检查其位置相关光电响应特性非常重要。到目前为止,通过石墨烯和SiC基板的组合或使用还原的氧化石墨烯,已经证明了位置相关的光电探测器非常有限(href="#bib23" rid="bib23" class=" bibr popnode"> Sarker等等,2017 ,href="#bib8" rid="bib8" class=" bibr popnode"> Ghosh等人,2010 )。但是,两种材料(石墨烯和SiC)的耦合会阻碍器件的光电转换效率和位置相关范围(500μm)。此外,整体钙钛矿单晶与石墨烯相比显示出更大的单晶面积,并且长的载流子扩散长度使光生电荷载流子在钙钛矿单晶中传输得更远,这为位置敏感的光电检测应用提供了潜力(href =“#bib25” rid =“ bib25” class =“ bibr popnode”> Shi等人,2015 )。在本文中,我们使用单一材料CH3NH3PbBr3(MAPbBr3)单晶来实现位置敏感光电探测器。利用硬掩模和电子束蒸发来定义钙钛矿单晶上特定形状的源极和漏极。通过建立定制设计的光电测试平台,通过聚焦的激光束测量了光电探测器的位置敏感光响应特性,显示了位置灵敏度和大面积光电检测。这种位置敏感型设备具有51 mA / W的最佳响应度的本地光电性能,与以前的报告相比,这是一个合理的值(href="#bib22" rid="bib22" class=" bibr popnode"> Saidaminov等人,2015b )。光电流与暗电流的比率高达9,表明在集成光电系统的构造中有潜在的应用。同时,不仅可以在钙钛矿通道上而且可以在距装置通道毫米范围的区域上实现对激光照射的光响应。还制造了两个样本以证明实验的可重复性,并且在href="#mmc1" rid="mmc1" class="Supplementary-material">图S1 中显示了更多详细信息。据我们所知,这是毫米范围距离检测的记录。最后,基于电场变化下载流子扩散和复合对器件通道附近照明位置的依赖性,通过有限元分析定性地解释了位置敏感的光响应。

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