Effects of Geometric and Crystallographic Factors on the Reliability of Al/Si Vertically Cracked Nanofilm/Substrate Systems

摘要

In this study, tensile tests on aluminum/silicon vertically cracked nanofilm/substrate systems were performed using atomistic simulations. Various crystallographic orientations and thicknesses of the aluminum nanofilms were considered to analyze the effects of these factors on the reliability of the nanofilm/substrate systems. The results show that systems with some specific crystallographic orientations have lower reliability compared to the other orientations because of the penetration of the vertical crack into the silicon substrate. This penetration phenomenon occurring in a specific model is related to a high coincidence of atomic matching between the interfaces in the model. This high coincidence leads to a tendency of the interface to maintain a coherent form in which the outermost silicon atoms of the substrate that are bonded to the aluminum nanofilm tend to stick with the aluminum atoms under tensile loads. This phenomenon was verified by interface energy calculations in the simulation models.