首页> 美国卫生研究院文献>other >Distortion-free measurement of electric field strength with a MEMSsensor
【2h】

Distortion-free measurement of electric field strength with a MEMSsensor

机译:使用MEMS进行电场强度的无失真测量传感器

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Small-scale and distortion-free measurement of electric fields is crucial for applications such as surveying atmospheric electrostatic fields, lightning research, and safeguarding areas close to high-voltage power lines. A variety of measurement systems exist, the most common of which are field mills, which work by picking up the differential voltage of the measurement electrodes while periodically shielding them with a grounded electrode. However, all current approaches are either bulky, suffer from a strong temperature dependency, or severely distort the electric field requiring a well-defined surrounding and complex calibration procedures. Here we show that microelectromechanical system (MEMS) devices can be used to measure electric field strength without significant field distortion. The purely passive MEMS devices exploit the effect of electrostatic induction, which is used to generate internal forces that are converted into an optically tracked mechanical displacement of a spring-suspended seismic mass. The devices exhibit resolutions on the order of 100(V/m)/Hz with a measurement range of up to tens of kilovolt per metre in the quasi-static regime (≲ 300 Hz).We also show that it should be possible to achieve resolutions of around1(V/m)/Hz by fine-tuning of the sensor embodiment. TheseMEMS devices are compact and could easily be mass produced for wideapplication.
机译:电场的小规模和无失真测量对于诸如测量大气静电场,雷电研究以及保护靠近高压电力线的区域等应用至关重要。存在多种测量系统,其中最常见的是现场研磨机,其通过拾取测量电极的差分电压同时定期用接地电极屏蔽它们来工作。但是,目前所有的方法要么体积庞大,要么受到强烈的温度依赖性,要么严重扭曲电场,从而需要良好定义的周围环境和复杂的校准程序。在这里,我们显示了微机电系统(MEMS)器件可用于测量电场强度而没有明显的场失真。纯粹的无源MEMS器件利用了静电感应的作用,该作用用于产生内力,该内力被转换为弹簧悬挂的地震质量的光学跟踪机械位移。设备显示的分辨率大约为 100 V / m / Hz 在准静态状态下(≲300 Hz)的测量范围可达每米数十千伏特。我们还表明,应该有可能达到大约 1 V / m / Hz 通过传感器实施例的微调。这些MEMS器件结构紧凑,可轻松批量生产应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号