首页> 美国卫生研究院文献>Nanoscale Research Letters >Black silicon with self-cleaning surface prepared by wetting processes
【2h】

Black silicon with self-cleaning surface prepared by wetting processes

机译:通过润湿工艺制备的具有自清洁表面的黑硅

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

This paper reports on a simple method to prepare a hydrophobic surface on black silicon, which is fabricated by metal-assisted wet etching. To increase the reaction rate, the reaction device was placed in a heat collection-constant temperature type magnetic stirrer and set at room temperature. It was demonstrated that the micro- and nanoscale spikes on the black silicon made the surface become hydrophobic. As the reaction rate increases, the surface hydrophobicity becomes more outstanding and presents self-cleaning until the very end. The reflectance of the black silicon is drastically suppressed over a broad spectral range due to the unique geometry, which is effective for the enhancement of absorption.
机译:本文报道了一种通过金属辅助湿法刻蚀在黑硅上制备疏水表面的简单方法。为了提高反应速度,将反应装置放置在集热恒温型磁力搅拌器中并设定为室温。事实证明,黑硅上的微米级和纳米级尖峰使表面变得疏水。随着反应速率的增加,表面疏水性变得更加突出,并呈现出自我清洁的效果,直到最后。由于独特的几何形状,黑硅的反射率在很宽的光谱范围内得到了显着抑制,这对于增强吸收有效。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号