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Microfabrication of a gadolinium-derived solid-state sensor for thermal neutrons

机译:用于热中子的-固态传感器的微制造

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摘要

Neutron sensing is critical in civilian and military applications. Conventional neutron sensors are limited by size, weight, cost, portability and helium supply. Here the microfabrication of gadolinium (Gd) conversion material–based heterojunction diodes for detecting thermal neutrons using electrical signals produced by internal conversion electrons (ICEs) is described. Films with negligible stress were produced at the tensile-compressive crossover point, enabling Gd coatings of any desired thickness by controlling the radiofrequency sputtering power and using the zero-point near p(Ar) of 50 mTorr at 100 W. Post-deposition Gd oxidation–induced spallation was eliminated by growing a residual stress-free 50 nm neodymium-doped aluminum cap layer atop Gd. The resultant coatings were stable for at least 6 years, demonstrating excellent stability and product shelf-life. Depositing Gd directly on the diode surface eliminated the air gap, leading to a 200-fold increase in electron capture efficiency and facilitating monolithic microfabrication. The conversion electron spectrum was dominated by ICEs with energies of 72, 132 and 174 keV. Results are reported for neutron reflection and moderation by polyethylene for enhanced sensitivity, and γ- and X-ray elimination for improved specificity. The optimal Gd thickness was 10.4 μm for a 300 μm-thick partially depleted diode of 300 mm2 active surface area. Fast detection (within 10 min) at a neutron source-to-diode distance of 11.7 cm was achieved with this configuration. All ICE energies along with γ-ray and Kα,β X-rays were modeled to emphasize correlations between experiment and theory. Semi-conductor thermal neutron detectors offer advantages for field-sensing of radioactive neutron sources.
机译:中子传感在民用和军事应用中至关重要。常规中子传感器受到尺寸,重量,成本,便携性和氦气供应的限制。这里介绍了基于the转换材料的异质结二极管的微制造,该二极管使用内部转换电子(ICE)产生的电信号来检测热中子。在拉伸压缩交点处产生的应力可忽略不计的薄膜,通过控制射频溅射功率并在100 W下使用50 mTorr的p(Ar)附近的零点,可以实现任何所需厚度的Gd涂层。沉积后Gd氧化通过在Gd上生长无残留的50 nm掺钕铝盖层,消除了诱发的剥落。所得涂料至少可稳定使用6年,证明其具有出色的稳定性和产品保质期。将Gd直接沉积在二极管表面消除了气隙,从而使电子捕获效率提高了200倍,并促进了单片微加工。转换电子光谱以能量为72、132和174keV的ICE为主。报道了聚乙烯对中子的反射和缓和作用的结果,以提高灵敏度,而消除γ和X射线则提高了特异性。对于300 mm 2 有效表面积的300μm厚的部分耗尽二极管,最佳Gd厚度为10.4μm。通过这种配置,可以在中子源到二极管的11.7 cm距离处实现快速检测(10分钟以内)。对所有ICE能量以及γ射线和Kα,βX射线进行建模,以强调实验与理论之间的相关性。半导体热中子探测器为放射性中子源的现场传感提供了优势。

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