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Graphene as an atomically thin interface for growth of vertically aligned carbon nanotubes

机译:石墨烯是用于垂直排列的碳纳米管生长的原子薄界面

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摘要

Growth of vertically aligned carbon nanotube (CNT) forests is highly sensitive to the nature of the substrate. This constraint narrows the range of available materials to just a few oxide-based dielectrics and presents a major obstacle for applications. Using a suspended monolayer, we show here that graphene is an excellent conductive substrate for CNT forest growth. Furthermore, graphene is shown to intermediate growth on key substrates, such as Cu, Pt, and diamond, which had not previously been compatible with nanotube forest growth. We find that growth depends on the degree of crystallinity of graphene and is best on mono- or few-layer graphene. The synergistic effects of graphene are revealed by its endurance after CNT growth and low contact resistances between the nanotubes and Cu. Our results establish graphene as a unique interface that extends the class of substrate materials for CNT growth and opens up important new prospects for applications.
机译:垂直排列的碳纳米管(CNT)林的生长对基材的性质高度敏感。这种限制将可用材料的范围缩小到仅几种基于氧化物的电介质,并成为应用的主要障碍。使用悬浮的单层,我们在这里表明石墨烯是CNT森林生长的极佳导电基质。此外,石墨烯显示出在关键基质(例如Cu,Pt和金刚石)上的中间生长,这些基质以前与纳米管森林的生长不相容。我们发现生长取决于石墨烯的结晶度,并且最好在单层或多层石墨烯上。石墨烯在CNT生长后的耐久性以及纳米管与Cu之间的低接触电阻显示出其协同作用。我们的结果将石墨烯确立为独特的界面,从而扩展了用于CNT生长的衬底材料的种类,并为应用打开了重要的新前景。

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