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Tungsten Doped TiO2 with Enhanced Photocatalytic and Optoelectrical Properties via Aerosol Assisted Chemical Vapor Deposition

机译:气溶胶辅助化学气相沉积增强钨掺杂的TiO2的光催化和光电性能

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摘要

Tungsten doped titanium dioxide films with both transparent conducting oxide (TCO) and photocatalytic properties were produced via aerosol-assisted chemical vapor deposition of titanium ethoxide and dopant concentrations of tungsten ethoxide at 500 °C from a toluene solution. The films were anatase TiO2, with good n-type electrical conductivities as determined via Hall effect measurements. The film doped with 2.25 at.% W showed the lowest resistivity at 0.034 Ω.cm and respectable charge carrier mobility (14.9 cm3/V.s) and concentration (×1019 cm−3). XPS indicated the presence of both W6+ and W4+ in the TiO2 matrix, with the substitutional doping of W4+ inducing an expansion of the anatase unit cell as determined by XRD. The films also showed good photocatalytic activity under UV-light illumination, with degradation of resazurin redox dye at a higher rate than with undoped TiO2.
机译:通过气溶胶辅助化学气相沉积乙醇钛和掺杂剂浓度为500 C的甲苯溶液,制备了具有透明导电氧化物(TCO)和光催化性能的掺钨二氧化钛薄膜。膜为锐钛矿型TiO2,具有通过霍尔效应测量确定的良好n型电导率。掺杂2.25 at。%W的薄膜在0.034Ω.cm处的电阻率最低,并且载流子迁移率(14.9 cm 3 / Vs)和浓度(×10 19 )最低。 cm −3 )。 XPS表示TiO2基质中同时存在W 6 + 和W 4 + ,W 4 + 的替代掺杂引起膨胀。由XRD确定的锐钛矿晶胞的数量。该膜在紫外光照射下也表现出良好的光催化活性,与未掺杂的TiO2相比,刃天青素氧化还原染料的降解速率更高。

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