A novel III-Nitride digital alloy (DA) with ultra-broadband optical gain is proposed. Numerical analysis shows a 50-period InN/GaN DA yields minibands that are densely quantized by numerous confined states. Interband transitions between the conduction and valence minibands create ultra-broadband optical gain spectra with bandwidths up to ~1 μm that can be tuned from the red to infrared. In addition, the ultra-broadband optical gain, bandwidth, and spectral coverage of the III-Nitride DA is very sensitive to layer thickness and other structural design parameters. This study shows the promising potential of the III-Nitride DAs with tunable ultra-broadband interband optical gain for use in semiconductor optical amplifiers and future III-Nitride photonic integration applications.
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机译：提出了一种具有超宽带光学增益的新型III族氮化物数字合金（DA）。数值分析表明，50周期的InN / GaN DA可以产生微带，这些微带被众多受限状态密集地量化。导带和价微带之间的带间过渡会创建带宽高达〜1μm的超宽带光学增益谱，可以将其从红色调谐到红外。此外，III-氮化物DA的超宽带光学增益，带宽和光谱覆盖范围对层厚度和其他结构设计参数非常敏感。这项研究表明，具有可调谐超宽带带间光增益的III-氮化物DA具有广阔的潜力，可用于半导体光放大器和未来的III-氮化物光子集成应用。
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